| INSULATING
SUBSTRATE Si3N4 for
POWER SEMICONDUCTOR MODULES |
| Overview |
By
assigning high thermal conductivity to high-strength, high-pliancy
silicon nitride (Si3N4)
ceramics, we have improved thermal shock resistance and heat-resistant
fatigue as well as greatly increased the reliability of semiconductor
modules. Furthermore, we have been able to realize a new module structure
that was not possible with conventional aluminum and aluminum nitride.
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| Proprietary
Features |
We
have succeeded in developing materials of both improved strength
and heat conductivity, attributes which usually involve a trade-off.
At 100W/m.K x 1,000 MPa (research level), we have achieved the world's
highest standard.
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| Direct
Benefits |
| (1) Conventionally, aluminum
and aluminum nitride have been used in the insulation boards
of power semiconductor modules, but the mechanical strength
is low and there are limitations with the structural design
of the module itself. Figure 1 shows the complicated construction. |

Figure 1: Conventional Structure |
| (2) By using the newly developed
high-strength, highly heat conductive Si3N4 in
the insulation board, we have been able to simplify the module
structure, as shown in Figure 2. It has become possible to
affix a thick Cu Wiring board, thereby lowering thermal resistance.
The construction has been further simplified by eliminating
the heat dissipation board, resulting in cost reductions. |

Figure 2: New Module Structure (Simplified) |
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| Associated
Benefits |
Applications |
Fields of Applications:
1. Can be widely used as a structural material where thermal shock
resistance and heat-resistant fatigue are required.
2. Its high degree of purity makes it suitable for use as a semiconductor
manufacturing device material.
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- Insulation boards for Peltier elemental modules
- Semiconductor manufacturing equipment material
- Heat-resistant structural material
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| Inquiries |
Business Developing Center
Tel.: +81-3-5765-4217
Inquiry Form |
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