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Computers & Semiconductor IC Products

SPUTTERING TARGET MATERIALS FOR LIQUID CRYSTAL PANELS

Overview

The liquid crystal display (LCD) market has expanded as the range of applications for these devices increases. As the increased use of liquid crystal in TVs demonstrates, it is expected that demand for large screens will grow steadily.

Current State of the Technology

Moving away from conventional Cr- and Mo-based materials for source/drain metal wiring for signal transmission within TFT devices and metal gate electrodes, manufacturers of large screens are increasingly adopting Al-based materials (typically Al) with low wiring resistance.

As a result of significant advances in multiple pattern technology using large glass substrates developed to reduce large-screen manufacturing costs, the technology for the production of large, integrated target materialsÑthe materials for forming the membrane used in multiple pattern technologyÑis becoming vital. Because of this, demand for large integrated Al-based target materials has grown rapidly.

Product Explanation

The products introduced here are large integrated, pure Al target materials made with a special manufacturing technology that minimizes splash defects during the forming of Al membranes.

Problems with membrane formation using sputtering
A current major problem with membrane formation using Al sputtering is lower yield rates due to splash defects.
Nature of the problems Because the fusion point of the Al itself is low, during the sputter forming of the membrane small areas of the Al melt droplets of liquid Al form and attach themselves to the glass substrate so that the following three causes of defects in target material quality arise:

  1. Creation of micropores
  2. Abnormal electrical discharge phenomena due to crystal grain bulkiness
  3. Abnormal electrical discharge phenomena due to the presence of oxides

Currently, splash defects arising from problems 1 and 2 occur frequently in melted and cast products, the main materials of Al targets.
How Hitachi Metals' pure Al target materials solve these problems Hitachi Metals' pure Al target is a flawless, fine-grained target material created by pressurized sintering with the HIP (hot isostatic pressing) method, using low-oxygen powder as a starting material. In addition, we have cut the quantity of oxygen, traditionally a problem in powder sintering, to 200ppm or under. This is half the usual ratio to powder.

Comparisons

Chart 1 is a comparative overview of Hitachi Metals' materials and conventional melting and casting materials. Figure 1 compares base-material soundness and microstructure. Hitachi Metals' materials show no increase in comparative resistivity through increased oxygen volume, which evaluations show to be a customer concern,and generally perform well in the comparison.

Chart 1: Comparison of Hitachi Metals' new materials and others
  Manufacturing method Material soundness (ultrasonic flaw detection) Average crystal grain size
(μm)
Oxygen quantity
(ppm)
Hitachi Metals' materials
Powder HIP 99.98% 38 170
Conventional materials (of rival companies) Melting/Casting 97.63% 400 30

Figure 1: Comparison of soundness and microstructure of Hitachi Metals' products
and other conventional materials
Material soundness
(ultrasonic flaw detection)
Microstructure
Hitachi Metals' products
Conventional materials (of rival companies)
Inquiries
Target Materials Planning Group, Specialty Steel Company
TEL : +81-3-3555-5387
Inquiry Form

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